IndiumV3, Main, Repository, bibRecord, 001497

Structural, optical and electrical properties of indium nitride polycrystalline films

Identifieur interne : 001497 ( Main/Repository ); précédent : 001496; suivant : 001498

Structural, optical and electrical properties of indium nitride polycrystalline films

Auteurs : RBID : Pascal:12-0238059

Descripteurs français

Pascal (Inist)
- Propriété optique, Propriété électrique, Composé III-V, Couche mince, Spectre photoélectron RX, Diffusion Raman, Analyse diffraction RX, Mesure électrique, Limite absorption, Niveau Fermi, Structure électronique, Lacune, Pulvérisation irradiation, Bande valence, Nitrure d'indium, Polycristal, Oxyde d'indium, Bande interdite, Diffraction RX, Méthode fonctionnelle densité, Microstructure, Modélisation, Etude théorique, InN, Substrat verre, In2O3, 7866, 7350, 7320, 7320A.

English descriptors

KwdEn :
- Absorption edge, Density functional method, Electrical measurement, Electrical properties, Electronic structure, Energy gap, Fermi level, III-V compound, Indium nitride, Indium oxide, Microstructure, Modelling, Optical properties, Polycrystals, Raman scattering, Sputtering, Theoretical study, Thin films, Vacancies, Valence bands, X-ray diffraction analysis, X-ray photoelectron spectra, XRD.

Abstract

The structural, optical and electrical properties of InN polycrystalline films on glass substrate are investigated by means of X-ray photoelectron spectroscopy, Raman scattering measurements, X-ray diffraction analysis, optical spectroscopy, and electrical measurements as a function of the inverse of temperature. The absorption edge for the films is most likely due to an impurity band formed by the presence of defects in the material. Such an impurity band, located at 1.6 eV extends itself to about 1.8 eV above the Fermi level, and it is attributed to nitrogen vacancies present in the material. The Raman scattering data also reveal the incorporation of oxygen in the InN films, leading to the formation of the In₂O₃ amorphous phase during the process of sputtering. Additionally, the X-ray photoelectron spectroscopy of the valence band, which is highly desirable to the determination of the Fermi level, confirms the optical gap energy. Furthermore, the X-ray diffraction patterns of the thinner films present broader peaks, indicating high values for the strain between the film lattice and the glass substrate. Finally, first principles calculations are used to investigate the optical properties of InN and also to support the experimental findings.

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Le document en format XML

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<author><name sortKey="Meneses, E A" uniqKey="Meneses E">E. A. Meneses</name>
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<author><name sortKey="Mertes, K M" uniqKey="Mertes K">K. M. Mertes</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Los Alamos National Laboratory</s1>
<s2>Los Alamos, NM 8754</s2>
<s3>USA</s3>
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<country>États-Unis</country>
<wicri:noRegion>Los Alamos National Laboratory</wicri:noRegion>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption edge</term>
<term>Density functional method</term>
<term>Electrical measurement</term>
<term>Electrical properties</term>
<term>Electronic structure</term>
<term>Energy gap</term>
<term>Fermi level</term>
<term>III-V compound</term>
<term>Indium nitride</term>
<term>Indium oxide</term>
<term>Microstructure</term>
<term>Modelling</term>
<term>Optical properties</term>
<term>Polycrystals</term>
<term>Raman scattering</term>
<term>Sputtering</term>
<term>Theoretical study</term>
<term>Thin films</term>
<term>Vacancies</term>
<term>Valence bands</term>
<term>X-ray diffraction analysis</term>
<term>X-ray photoelectron spectra</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété optique</term>
<term>Propriété électrique</term>
<term>Composé III-V</term>
<term>Couche mince</term>
<term>Spectre photoélectron RX</term>
<term>Diffusion Raman</term>
<term>Analyse diffraction RX</term>
<term>Mesure électrique</term>
<term>Limite absorption</term>
<term>Niveau Fermi</term>
<term>Structure électronique</term>
<term>Lacune</term>
<term>Pulvérisation irradiation</term>
<term>Bande valence</term>
<term>Nitrure d'indium</term>
<term>Polycristal</term>
<term>Oxyde d'indium</term>
<term>Bande interdite</term>
<term>Diffraction RX</term>
<term>Méthode fonctionnelle densité</term>
<term>Microstructure</term>
<term>Modélisation</term>
<term>Etude théorique</term>
<term>InN</term>
<term>Substrat verre</term>
<term>In2O3</term>
<term>7866</term>
<term>7350</term>
<term>7320</term>
<term>7320A</term>
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<front><div type="abstract" xml:lang="en">The structural, optical and electrical properties of InN polycrystalline films on glass substrate are investigated by means of X-ray photoelectron spectroscopy, Raman scattering measurements, X-ray diffraction analysis, optical spectroscopy, and electrical measurements as a function of the inverse of temperature. The absorption edge for the films is most likely due to an impurity band formed by the presence of defects in the material. Such an impurity band, located at 1.6 eV extends itself to about 1.8 eV above the Fermi level, and it is attributed to nitrogen vacancies present in the material. The Raman scattering data also reveal the incorporation of oxygen in the InN films, leading to the formation of the In<sub>2</sub>
O<sub>3</sub>
 amorphous phase during the process of sputtering. Additionally, the X-ray photoelectron spectroscopy of the valence band, which is highly desirable to the determination of the Fermi level, confirms the optical gap energy. Furthermore, the X-ray diffraction patterns of the thinner films present broader peaks, indicating high values for the strain between the film lattice and the glass substrate. Finally, first principles calculations are used to investigate the optical properties of InN and also to support the experimental findings.</div>
</front>
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<sZ>7 aut.</sZ>
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<fA14 i1="04"><s1>Los Alamos National Laboratory</s1>
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<fC01 i1="01" l="ENG"><s0>The structural, optical and electrical properties of InN polycrystalline films on glass substrate are investigated by means of X-ray photoelectron spectroscopy, Raman scattering measurements, X-ray diffraction analysis, optical spectroscopy, and electrical measurements as a function of the inverse of temperature. The absorption edge for the films is most likely due to an impurity band formed by the presence of defects in the material. Such an impurity band, located at 1.6 eV extends itself to about 1.8 eV above the Fermi level, and it is attributed to nitrogen vacancies present in the material. The Raman scattering data also reveal the incorporation of oxygen in the InN films, leading to the formation of the In<sub>2</sub>
O<sub>3</sub>
 amorphous phase during the process of sputtering. Additionally, the X-ray photoelectron spectroscopy of the valence band, which is highly desirable to the determination of the Fermi level, confirms the optical gap energy. Furthermore, the X-ray diffraction patterns of the thinner films present broader peaks, indicating high values for the strain between the film lattice and the glass substrate. Finally, first principles calculations are used to investigate the optical properties of InN and also to support the experimental findings.</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>04</s5>
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<fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0>
<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<fC03 i1="06" i2="X" l="SPA"><s0>Difusión Ramán</s0>
<s5>06</s5>
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<fC03 i1="07" i2="3" l="FRE"><s0>Analyse diffraction RX</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>X-ray diffraction analysis</s0>
<s5>07</s5>
</fC03>
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<s5>08</s5>
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<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Medida eléctrica</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Limite absorption</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Absorption edge</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Niveau Fermi</s0>
<s5>10</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Fermi level</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Structure électronique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Electronic structure</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Lacune</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Vacancies</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Sputtering</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Bande valence</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Valence bands</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Polycristal</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Polycrystals</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>17</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>Bande interdite</s0>
<s5>29</s5>
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<fC03 i1="18" i2="3" l="ENG"><s0>Energy gap</s0>
<s5>29</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>30</s5>
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<fC03 i1="19" i2="3" l="ENG"><s0>XRD</s0>
<s5>30</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Méthode fonctionnelle densité</s0>
<s5>31</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Density functional method</s0>
<s5>31</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Microstructure</s0>
<s5>32</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Microstructure</s0>
<s5>32</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Modélisation</s0>
<s5>33</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Modelling</s0>
<s5>33</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Etude théorique</s0>
<s5>34</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Theoretical study</s0>
<s5>34</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>7320</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>7320A</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>184</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Structural, optical and electrical properties of indium nitride polycrystalline films

Structural, optical and electrical properties of indium nitride polycrystalline films

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